The aim is to study, design build and measure various classes of GaN RF power amplifiers using discrete components. This concludes
- Study of the different classes of individual power amplifier stages: class A, AB, B, C, F, inverse F, and J,
- Design a power amplifier using discrete GaN transistors (e.g. using the Cree Wolfspeed CG2H40010 transistor) and the professional RF PCB fabrication with Advanced Design Systems (ADS) software of Keysight,
- Build and measure the amplifiers’ performance using RF spectrum analyzers and (VNA) network analyzers.