14. Comparative study of GaN RF power amplifiers for high power 2.4GHz applications

The aim is to study, design build and measure various classes of GaN RF power amplifiers using discrete components. This concludes

  • Study of the different classes of individual power amplifier stages: class A, AB, B, C, F, inverse F, and J,
  • Design a power amplifier using discrete GaN transistors (e.g. using the Cree Wolfspeed CG2H40010 transistor) and the professional RF PCB fabrication with Advanced Design Systems (ADS) software of Keysight,
  • Build and measure the amplifiers’ performance using RF spectrum analyzers and (VNA) network analyzers.


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